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New Product | SiC Power Module 1200V/1000A
芯能半導體 芯能半導體 Loading... 2024-04-24

新品發(fā)布

New Product Release


Xiner Semiconductor has launched a new 1200V_1000A C5 power module, which uses 1200V SiC MOSFETs with high performance and high reliability. Econodual compatible. The product is characterized by ultra-low Rds(on), ultra-low switching loss, high current density, low thermal resistance, and low parasitic inductance design.


芯能半導體新推出一款1200V_1000A C5模塊,該模塊采用高性能、高可靠性的1200V SiC MOSFET。封裝兼容Econodual。該產(chǎn)品具有超低的Rds(on)、超低開關(guān)損耗、高電流密度、低熱阻、低寄生電感設計的特點。


Related products/相關(guān)產(chǎn)品:

XNC1000BT12YA-J33 2mΩ / XNC1000BT12YA-J33 2mΩ

1200V C5 Half-bridge power module /1200V C5半橋功率模塊

Product Characteristics/產(chǎn)品特性


Product Features/產(chǎn)品特點

1、1200V SiC MOSFET /1200V SiC MOSFET

2、C5 package (compatible with Econodual) /C5封裝(兼容Econodual)

3、Integrated diode, optimized thermal resistance /集成體二極管,優(yōu)化了熱阻

4、Excellent grid oxide reliability /優(yōu)秀的柵極氧化層可靠性

5、Press FIT Pin /PressFit引腳


Competitive Advantage/競爭優(yōu)勢

1、Very low module parasitic inductance in similar packages /同類封裝中,非常低的模塊寄生電感

2、Silver sintering process, very superior heat dissipation performance /銀燒結(jié)工藝,非常優(yōu)越的散熱性能


Application Value/應用價值

1、Lower voltage overshoot/更低的電壓過沖

2、Low on-off loss/低導通損耗

3、Low switching loss/低開關(guān)損耗

4、Symmetrical module design realizes symmetrical upper and lower arm switching behavior/模塊采用對稱設計實現(xiàn)對稱的上下橋臂開關(guān)行為

5、Low thermal resistance and high performance AMB/低熱阻高性能AMB

Application Area/應用領(lǐng)域



Topological Structure/拓撲結(jié)構(gòu)


Test Waveform/測試波形

1x current switch waveform @175℃

1倍電流開關(guān)波形@175℃


1x current reverse recovery waveform @175℃

1倍電流反向恢復波形@175℃

  

※ :For specific product information, please consult our sales personnel or request product specifications(service@invsemi.com).

產(chǎn)品具體信息可向我司銷售人員咨詢或索取產(chǎn)品規(guī)格(service@invsemi.com)。



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